결정질 실리콘 태양전지 도핑 확산 공정에서 시간과 온도 변화에 의한 Drive-in 공정 연구

Optimization of Drive-in Process with Various Times and Temperatures in Crystalline Silicon Solar Cell Fabrication

  • 이희준 (연세대학교 대학원 신소재공학과) ;
  • 최성진 (한국에너지기술연구원, 태양광센터) ;
  • 명재민 (연세대학교 대학원 신소재공학과) ;
  • 송희은 (한국에너지기술연구원, 태양광센터) ;
  • 유권종 (한국에너지기술연구원, 태양광센터)
  • Lee, Hee-Jun (Dept. of Material Science and Engineering, Graduate School, Yonsei University) ;
  • Choi, Sung-Jin (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Myoung, Jae-Min (Dept. of Material Science and Engineering, Graduate School, Yonsei University) ;
  • Song, Hee-Eun (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Yu, Gwon-Jong (Photovoltaic Research Center, Korea Institute of Energy Research)
  • 발행 : 2011.11.24

초록

In this paper, the optimized doping condition of crystalline silicon solar cells with 156 ${\times}$ 156 mm2 area was studied. To optimize the drive-in condition in the doping process, the other conditions except drive-in temperature and time were fixed. After etching 7 ${\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in $400-425-450-550-850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $828^{\circ}C$ to $860^{\circ}C$ and time was from 3 min to 40 min. The sheet resistance of wafer was fixed to avoid its effect on solar cell. The solar cell fabricated with various conditions showed the similar conversion efficiency of 17.4%. This experimental result showed the drive-in temperatures and times little influence on solar cell characteristics.

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