Influence of Ion Isolation on the Resistivity of Different Types of GaN

Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.