Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2011.05a
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- Pages.34.2-34.2
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- 2011
Post Ru CMP Cleaning for Alumina Particle Removal
- Prasad, Y. Nagendra (Hanyang Univ., Department of Materials Engineering) ;
- Kwon, Tae-Young (Hanyang Univ., Department of Materials Engineering) ;
- Kim, In-Kwon (Hanyang Univ., Department of Materials Engineering) ;
- Park, Jin-Goo (Hanyang Univ., Department of Materials Engineering)
- Published : 2011.05.27
Abstract
The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into