한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 2011년도 춘계학술발표대회
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- Pages.28.2-28.2
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- 2011
Fully Room Temperature fabricated $TaO_x$ Thin Film for Non-volatile Memory
- Choi, Sun-Young (Optoelectronic Materials Center, Korea Institute of Science and Technology) ;
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Kim, Sang-Sig
(Department of Electrical Engineering, Korea University) ;
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Lee, Jeon-Kook
(Optoelectronic Materials Center, Korea Institute of Science and Technology,)
- 발행 : 2011.05.27
초록
Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/