한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2011년도 제40회 동계학술대회 초록집
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- Pages.147-147
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- 2011
Demonstration of Nonpolar a-plane Light Emitting Diodes on r-plane Sapphire Substrate by MOCVD
- Son, Ji-Su (Energy-nano Center, Korea Electronics Technology Institute) ;
- Baik, Kwang-Hyeon (Energy-nano Center, Korea Electronics Technology Institute) ;
- Song, Hoo-Young (Energy-nano Center, Korea Electronics Technology Institute) ;
- Kim, Ji-Hoon (Energy-nano Center, Korea Electronics Technology Institute) ;
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Kim, Tae-Geun
(Department of Electronic Engineering, Korea University) ;
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Hwang, Sung-Min
(Energy-nano Center, Korea Electronics Technology Institute)
- 발행 : 2011.02.09
초록
High crystalline nonpolar a-plane (11-20) nitride light emitting diodes (LEDs) have been fabricated on r-plane (1-102) sapphire substrates by metalorganic chemical-vapor deposition (MOCVD). The multi-quantum wells (MQWs) active region is consists of 4 periods the nonpolar a-plane InGaN/GaN(a-InGaN/GaN) on a high quality a-plane GaN (a-GaN) template grown by using the multibuffer layer technique. The full widths at half maximum (FWHMs) of x-ray rocking curve (XRC) obtained from phiscan of the specimen that was grown up to nonpolar a-plane GaN LED layers with double crystal x-ray diffraction. The FWHM values were decreased down to 477 arc sec for