한국태양에너지학회:학술대회논문집

한국태양에너지학회 (The Korean Solar Energy Society)
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박형 결정질 실리콘 태양전지 제작을 위한 웨이퍼 두께에 따른 특성 연구

Characteristics of doping process with various wafer thicknesses for thin crystalline silicon solar cell application

  • Jeong, Kyeong-Taek (School of Chemical Engineering, Chonbuk National University) ;
  • Lee, Hee-Jun (Dept. of Material Science and Engineering, Yonsei University) ;
  • Song, Hee-Eun (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Yoo, Kwon-Jong (Photovoltaic Research Center, Korea Institute of Energy Research) ;
  • Yang, O-Bong (School of Chemical Engineering, Chonbuk National University)
  • 발행 : 2011.04.07
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초록

Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.

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