Characteristics of doping process with various wafer thicknesses for thin crystalline silicon solar cell application

박형 결정질 실리콘 태양전지 제작을 위한 웨이퍼 두께에 따른 특성 연구

Many studies in crystalline silicon solar cell fabrication have been focused on high efficiency and low cost. In this paper, we carried out the doping procedure by varying the silicon wafer thicknesses and sheet resistance. The silicon wafers with various thicknesses were obtained by shiny etching and texturing. The thicknesses of wafers were 100, 120, 150, and $180{\mu}m$. The emitter layer formed by $POCl_3$ doping process had sheet resistance with 40 and $80{\Omega}/sq$ for selective emitter application. This experiment indicated wafer thickness did not influence sheet resistance but lifetime was strongly effected.