A Study on the Optimization of Polysilicon Solar Cell Structure

다결정 실리콘 태양전지 구조 최적화에 관한 연구

  • Lee, Jae-Hyeong (Department of Electronic Engineering, Kunsan National University) ;
  • Jung, Hak-Ki (Department of Electronic Engineering, Kunsan National University) ;
  • Jung, Dong-Su (Department of Electronic Engineering, Kunsan National University) ;
  • Lee, Jong-In (Department of Electronic Engineering, Kunsan National University)
  • Published : 2011.05.26

Abstract

Poly-Si wafers with resistivity of 1 [${\Omega}$-cm[ and thickness of 50 [${\mu}m$] were used as a starting material. Various efficiency influencing parameters such as rear surface recombination velocity and minority carrier diffusion length in the base region, front surface recombination velocity, junction depth and doping concentration in the Emitter layer, BSF thickness and doping concentration were investigated. Optimized cell parameters were given as rear surface recombination of 1000 [cm/sec], minority carrier diffusion length in the base region 50 [${\mu}m$], front surface recombination velocity 100 [cm/sec], sheet resistivity of emitter layer 100 [${\Omega}/{\Box}$], BSF thickness 0.5 [${\mu}m$], doping concentration $5{\times}10^{19}\;cm^{-3}$. Among the investigated variables, we learn that a diffusion length of base layer acts as a key factor to achieve conversion efficiency higher than 19.8 %. Further details of simulation parameters and their effects to cell characteristics are discussed in this paper.

고효율 다결정 태양전지 제작의 방향을 제시하기 위해 PC1D 프로그램을 이용하여 전, 후면 재결합 속도, 소수 캐리어 확산거리, 접합깊이, 에미터 층 면저항, 후면 전계층이 미치는 영향을 조사하였다. 최적화된 전지 파라미터는 후면 재결합 속도 1000 cm/sec, 베이스 층에서의 소수 캐리어 확산거리 50 [${\mu}m$], 전면 재결합 속도 100 [cm/sec], 에미터 층 면저항 $100{\Omega}/\Box$, 후면 전계층 두께 및 도핑 농도는 각각 0.5 [${\mu}m$]와 $5{\times}10^{19}\;cm^{-3}$로 조사되었다. 특히 19.8% 이상의 변환효율을 얻기 위해서는 베이스층의 확산거리가 가장 중요한 파라미터임을 알 수 있었다.

Keywords