Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.176-176
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- 2010
The electrical characteristics of flexible organic field effect transistors with flexible multi-stacked hybrid encapsulation
- Seol, Yeong-Guk (Department of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Heo, Uk (Department of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Park, Ji-Su (Department of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Lee, Nae-Eung (Department of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
- Lee, Deok-Gyu (School of Mechanical Engineering, Sungkyunkwan University) ;
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Kim, Yun-Je
(School of Mechanical Engineering, Sungkyunkwan University) ;
- An, Cheol-Hyeon (Department of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
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Jo, Hyeong-Gyun
(Department of Advanced Materials Science and Engineering, Sungkyunkwan University)
- Published : 2010.08.18
Abstract
One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from
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