Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.169-169
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- 2010
The improvement of electrical properties of InGaZnO (IGZO)4(IGZO) TFT by treating post-annealing process in different temperatures.
- Kim, Soon-Jae (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Lee, Hoo-Jeong (School of Advanced Material Science and Engineering, Sungkyunkwan University) ;
- Yoo, Hee-Jun (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Park, Gum-Hee (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Kim, Tae-Wook (School of Information and Communication Engineering, Sungkyunkwan University) ;
- Roh, Yong-Han (School of Information and Communication Engineering, Sungkyunkwan University)
- Published : 2010.08.18
Abstract
As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates.
Keywords