Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)
- 2010.05a
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- Pages.30.2-30.2
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- 2010
Direct Printable Nanowire p-n Junction device
- Lee, Tae-Il (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Choi, Won-Jin (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Kar, Jyoti Prakash (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Moon, Kyung-Ju (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Lee, Min-Jung (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Jun, Joo-Hee (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Baik, Hong-Koo (Department of Advanced Materials Science and Engineering, Yonsei University) ;
- Myoung, Jae-Min (Department of Advanced Materials Science and Engineering, Yonsei University)
- Published : 2010.05.13
Abstract
Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.