한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
- /
- Pages.383-383
- /
- 2010
TiN 박막의 건식 식각 특성
Dry Etching Characteristic of TiN Thin Films using Inductively Coupled Plasma
- Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
- Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
- 발행 : 2010.06.16
초록
TiN is one of the mostly used barrier materials in copper metallization because of low friction coefficient and superior electrical properties. We need to investigate for the etching characteristic of TiN. In this study, we investigated about etching characteristic of TiN using