한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.378-378
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- 2010
Point-defect study from low-temperature photoluminescence of ZnSe layers through the post-annealing in various ambient
- Lee, Sang-Youl (Department of Physics, Chosun University) ;
- Hong, Kwang-Joon (Department of Physics, Chosun University) ;
- Kim, Hae-Jeong (Department of Physics, Chosun University)
- 발행 : 2010.06.16
초록
The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low, temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton,