한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
- /
- Pages.365-365
- /
- 2010
단결정 실리콘 태양전지를 위한 실리콘 질화막의 밴드갭과 결함사이트
Band Gap and Defect Sites of Silicon Nitride for Crystalline Silicon Solar Cells
- Jung, Sung-Wook (Sungkyunkwan University) ;
- Yi, Jun-Sin (Sungkyunkwan University)
- 발행 : 2010.06.16
초록
In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher