한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.355-355
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- 2010
금속(Al, Cr, Ni)의 일함수를 고려한 쇼트키 장벽 트랜지스터의 전기-광학적 특성
Metal work function dependent photoresponse of schottky barrier metal-oxide-field effect transistors(SB MOSFETs)
- Jung, Ji-Chul (Kwangwoon University) ;
- Koo, Sang-Mo (Kwangwoon University)
- 발행 : 2010.06.16
초록
We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of