한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.347-347
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- 2010
Sb-doped Ag/Ge-Se-Te 박막의 상변화 특성 연구
A Study of Phase-change Properties of Sb-doped Ag/Ge-Se-Te thin films
- Nam, Ki-Hyun (Kwangwoon University) ;
- Jeong, Won-Kook (Kwangwoon University) ;
- Park, Ju-Hyun (Kwangwoon University) ;
- Chung, Hong-Bay (Kwangwoon University)
- 발행 : 2010.06.16
초록
In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.