한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.267-267
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- 2010
HWCVD를 이용하여 Microcrystalline film 성장시 Silane 농도에 따른 박막 성장 특성
- Park, Seung-Il (DMS Co., LTD) ;
- Lee, Jung-Tack (Chonbuk National University) ;
- Lee, Jeong-Chul (KIER) ;
- Huh, Yun-Sung (DMS Co., LTD) ;
- Kim, Keun-Joo (Chonbuk National University)
- 발행 : 2010.06.16
초록
The structural and electrical properties of microcrystalline silicon films were investigated by hot wire chemical vapor deposition(HWCVD) often called catalytic chemical vapor deposition(Cat-CVD). The Si microcrystalline phase is easily controlled by changing the rate of the silane concentration of