한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.160-160
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- 2010
p-InGaN/GaN 초격자구조에서 열처리 조건에 따른 오믹전극의 특성
Characteristics of p-InGaN/GaN Superlattice structure of the p-GaN according to annealing conditions
- 장선호 (영남대학교 & LED-IT 융합산업화연구센터) ;
- 김세민 (영남대학교 & LED-IT 융합산업화연구센터) ;
- 이영웅 (영남대학교 & LED-IT 융합산업화연구센터) ;
- 이영석 (영남대학교 & LED-IT 융합산업화연구센터) ;
- 이종선 (영남대학교 & LED-IT 융합산업화연구센터) ;
- 박민정 (영남대학교 & LED-IT 융합산업화연구센터) ;
- 박일규 (영남대학교 & LED-IT 융합산업화연구센터) ;
-
장자순
(영남대학교 & LED-IT 융합산업화연구센터)
- Jang, Seon-Ho (Yeungnam University & LED-IT FusionTechnology Research Center) ;
- Kim, Sei-Min (Yeungnam University & LED-IT FusionTechnology Research Center) ;
- Lee, Young-Woong (Yeungnam University & LED-IT FusionTechnology Research Center) ;
- Lee, Young-Seok (Yeungnam University & LED-IT FusionTechnology Research Center) ;
- Lee, Jong-Seon (Yeungnam University & LED-IT FusionTechnology Research Center) ;
- Park, Min-Jung (Yeungnam University & LED-IT FusionTechnology Research Center) ;
- Park, Il-Kyu (Yeungnam University & LED-IT FusionTechnology Research Center) ;
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Jang, Ja-Soon
(Yeungnam University & LED-IT FusionTechnology Research Center)
- 발행 : 2010.06.16
초록
In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is
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