The effect of helium thermal treatment using ZnO thin films

Zno 박막의 Helium 열처리에 대한 효과

It is observed from SEM images that many voids were created after annealed by helium gas. The PL spectra of the ZnO samples revealed the strong violet emission peaks at 3.05 eV with the relative weak near band edge UV emissions. It was concluded from experiment results that native $Zn_i$ and $V_o$ donor defect levels can be generated below the conduction band edge due to the incorporation of helium atoms decomposed from helium gas into the ZnO matrix. He atoms in ZnO matrix will affect the interface trap existing in depletion regions located at the grain boundaries, which leads to the creation of $Zn_i$ and $V_o$ donor defect levels.