한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.57-57
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- 2010
c-AFM 기술을 이용한 나노급 상변화 소자 특성 평가에 대한 연구
The study about phase phase change material at nano-scale using c-AFM method
- Hong, Sung-Hoon (Department of Materials Science and Engineering, Korea University) ;
- Lee, Heon (Department of Materials Science and Engineering, Korea University)
- 발행 : 2010.06.16
초록
In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.
키워드