한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
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- Pages.12-12
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- 2010
스퍼터링 공정으로 제작된 비정질 산화물 박막트랜지스터의 하프늄 금속이온 영향
Role of Hf in amorphous oxide thin film transistors fabricated by rf-magnetron sputtering
- 정유진 (한국과학기술연구원 전자재료센터) ;
- 전윤수 (한국과학기술연구원 전자재료센터) ;
- 조경철 (한국과학기술연구원 전자재료센터) ;
- 김승한 (한국과학기술연구원 전자재료센터) ;
- 정다운 (한국과학기술연구원 전자재료센터) ;
- 이상렬 (한국과학기술연구원 전자재료센터)
- Chong, Eu-Gene (Electronic Materials Center, Korea Institute of Science and Technology) ;
- Chun, Yoon-Soo (Electronic Materials Center, Korea Institute of Science and Technology) ;
- Jo, Kyoung-Chol (Electronic Materials Center, Korea Institute of Science and Technology) ;
- Kim, Seung-Han (Electronic Materials Center, Korea Institute of Science and Technology) ;
- Jung, Da-Woon (Electronic Materials Center, Korea Institute of Science and Technology) ;
- Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
- 발행 : 2010.06.16
초록
Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on