Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.392-392
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- 2010
Reduction of surface roughness during high speed thinning of silicon wafer
- Heo, W. (School of Advanced Materials Science & Engineering, Center for Advanced Plasma Surface Technology, and Center for Human Interface Nanotechnology, Sungkyunkwan University) ;
- Ahn, J.H. (School of Advanced Materials Science & Engineering, Center for Advanced Plasma Surface Technology, and Center for Human Interface Nanotechnology, Sungkyunkwan University) ;
- Lee, N.E. (School of Advanced Materials Science & Engineering, Center for Advanced Plasma Surface Technology, and Center for Human Interface Nanotechnology, Sungkyunkwan University)
- Published : 2010.02.17
Abstract
In this study, high-speed chemical dry thinning process of Si wafer and evolution of surface roughness were investigated. Direct injection of NO gas into the reactor during the supply of F radicals from
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