Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.200-200
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- 2010
Sol-gel deposited TiInO thin-films transistor with Ti effect
- Kim, Jung-Hye (Department of Chemical Engineering, Keimyung University) ;
- Son, Dae-Ho (Public & Original Technology Research Center, DGIST) ;
- Kim, Dae-Hwan (Public & Original Technology Research Center, DGIST) ;
- Kang, Jin-Kyu (Public & Original Technology Research Center, DGIST) ;
- Ha, Ki-Ryong (Department of Chemical Engineering, Keimyung University)
- Published : 2010.02.17
Abstract
In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [
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