한국신재생에너지학회:학술대회논문집
- 2010.11a
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- Pages.46.1-46.1
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- 2010
A study on wafer surface passivation properties using hydrogenated amorphous silicon thin film
수소화된 비정질 실리콘 박막을 이용한 웨이퍼 패시베이션 특성 연구
- Published : 2010.11.16
Abstract
Surface passivation of crystalline silicon(c-Si) surface with a-Si:H thin films has been investigated by using quasi-steady-state photo conductance(QSSPC) measurements. Analyzing the influence of a-Si:H film thickness, process gas ratio, deposition temperature and post annealing temperature on the passivation properties of c-Si, we optimized the passivation conditions at the substrate temperature of
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