한국신재생에너지학회:학술대회논문집
- 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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- Pages.96.2-96.2
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- 2010
Al 박막을 이용한 다결정 Si 박막의 제조에서 기판온도 영향 연구
Effect of Substrate Temperature on Polycrystalline Silicon Film Deposited on Al Layer
- Ahn, Kyung Min (KAIST) ;
- Kang, Seung Mo (KAIST) ;
- Ahn, Byung Tae (KAIST)
- 발행 : 2010.06.17
초록
The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above
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