Transparent Thin Film Transistor using $Al_2O_3$/$HfO_2$ as Gate Insulator Layer

  • Park, J.K. (School of Information and Communication engineering, Sungkyunkwan University) ;
  • Roh, Yong-Han (School of Information and Communication engineering, Sungkyunkwan University)
  • 발행 : 2009.02.11