Effect of triple stacked bandgap-engineered tunneling barrier with silicon-richsilicon-nitride layer as charge storage node in non-volatile memory applications

Yim, Tae-Kyung (Department of Nano Science and Technology, University of Seoul) ;
Kim, Eun-Kyeom (Department of Nano Engineering, University of Seoul) ;
An, Seung-Man (Department of Nano Science and Technology, University of Seoul) ;
Won, Sung-Hwan (Department of Nano Science and Technology, University of Seoul) ;
Sok, Jung-Hyun (Department of Nano Science and Technology, University of Seoul) ;
Hong, Wan-Shick (Department of Nano Science and Technology, University of Seoul) ;
Park, Kyoung-Wan (Department of Nano Science and Technology, University of Seoul)