Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2009.08a
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- Pages.204-204
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- 2009
Effect of triple stacked bandgap-engineered tunneling barrier with silicon-richsilicon-nitride layer as charge storage node in non-volatile memory applications
- Yim, Tae-Kyung (Department of Nano Science and Technology, University of Seoul) ;
- Kim, Eun-Kyeom (Department of Nano Engineering, University of Seoul) ;
- An, Seung-Man (Department of Nano Science and Technology, University of Seoul) ;
- Won, Sung-Hwan (Department of Nano Science and Technology, University of Seoul) ;
- Sok, Jung-Hyun (Department of Nano Science and Technology, University of Seoul) ;
- Hong, Wan-Shick (Department of Nano Science and Technology, University of Seoul) ;
- Park, Kyoung-Wan (Department of Nano Science and Technology, University of Seoul)
- Published : 2009.08.19
Abstract
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