NBTI/PBTI analysis of the memory characteristics improved by hydrogen annealing in MANOS capacitors

  • Kim, H.D. (Dept. of Electronics Eng., Korea Univ.) ;
  • An, H.M. (Dept. of Electronics Eng., Korea Univ.) ;
  • Seo, Y.J. (Dept. of Electronics Eng., Korea Univ.) ;
  • Zhang, Y. (Dept. of Electronics Eng., Korea Univ.) ;
  • Kim, K.C. (Dept. of Electronics Eng., Korea Univ.) ;
  • Nam, K.H. (Dept. of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Chung, H.B. (Dept. of Electronic Materials Engineering, Kwangwoon Univ.) ;
  • Kim, T.G. (Dept. of Electronics Eng., Korea Univ.)
  • 발행 : 2009.08.19