비 진공으로 제작한 CIGS 박막 특성

Characteristics of CIGS film fabricated by non-vacuum process

  • 박명국 (한국에너지기술연구원 태양광 연구단) ;
  • 안세진 (한국에너지기술연구원 태양광 연구단) ;
  • 윤재호 (한국에너지기술연구원 태양광 연구단) ;
  • 곽지혜 (한국에너지기술연구원 태양광 연구단) ;
  • 김동환 (고려대학교 신소재공학과) ;
  • 윤경훈 (한국에너지기술연구원 CIS 태양전지 실험실)
  • 발행 : 2009.06.25

초록

A non-vacuum process for fabrication of $CuIn_xGa_{1-x}Se_2$ (CIGS) absorber layer from the corresponing Cu, In, Ga solution precursors was described. Cu, In, Ga precursor solution was prepared by a room temperature colloidal route by reacting the starting materials $Cu(NO_3)_2$, $InCl_3$, $Ga(NO_3)$ and methanol. The Cu, In, Ga precursor solution was mixed with ethylcellulose as organic binder material for the rheology of the mixture to be adjusted for the doctor blade method. After depositing the mixture of Cu, In, Ga solution with binder on Mo/glass substrate, the samples were preheated on the hot plate in air to evaporate remaining solvents and to burn the organic binder material. Subsequently, the resultant CIG/Mo/glass sample was selenized in Se evaporation in order to get a solar cell applicable dense CIGS absorber layer. The CIGS absorber layer selenized at $530^{\circ}C$ substrate temperature for 1h with various metal organic ratio.

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