한국광학회:학술대회논문집 (Proceedings of the Optical Society of Korea Conference)
- 한국광학회 2009년도 동계학술발표회 논문집
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- Pages.509-510
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- 2009
양자우물 두께와 인듐조성 변화에 의한 470 mm RC-LED InGaN/GaN 양자우물 구조의 최적화
Optimization of the InGaN/GaN quantum well structure for 470 mm RC-LED with variation of quantum well thickness and Indium composition
- 발행 : 2009.02.12
초록
The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.
키워드