Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Relationship between Photo Leakage Current of a-Si:H Thin Film Transistor and the Photon Energy Spectrum of various Backlight Sources

비정질 실리콘 박막 트랜지스터의 광누설 전류와 다양한 광원의 광자 에너지스펙트럼과의 관계에 관한 연구

  • Jeong, K.S. (Department of Electronics Engineering, Kyungwon University) ;
  • Kwon, S.J. (Department of Electronics Engineering, Kyungwon University) ;
  • Cho, E.S. (Department of Electronics Engineering, Kyungwon University)
  • 정경서 (경원대학교 전자정보통신공학부 전자공학) ;
  • 권상직 (경원대학교 전자정보통신공학부 전자공학) ;
  • 조의식 (경원대학교 전자정보통신공학부 전자공학)
  • Published : 2009.04.24
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Abstract

Photoelectric characteristics of a hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) were obtained for the illumination from various backlight sources and the results were compared and analyzed in terms of the photon energy spectral characteristics of the backlights obtained from the integration of the multiplication of the photon energy and the spectral intensity at etch wavelength. It was possible to conclude that the absorption of illuminated backlight to a-Si:H layer and the generation of electrons and holes are mainly carried out at the wavelength less than 500nm.

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