Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.04b
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- Pages.63-64
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- 2009
Study on contact resistance on the performance of Oxide thin film transistors
산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향
- Lee, Jae-Sang (Korea Institute of Science and Technology) ;
- Chang, Seong-Pil (Korea Institute of Science and Technology) ;
- Koo, Sang-Mo (Kwangwoon University) ;
- Lee, Sang-Yeol (Korea Institute of Science and Technology)
- 이재상 (한국과학기술연구원 에너지재료연구단) ;
- 장성필 (한국과학기술연구원 에너지재료연구단) ;
- 구상모 (광운대학교 전자재료공학과) ;
- 이상렬 (한국과학기술연구원 에너지재료연구단)
- Published : 2009.04.03
Abstract
The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and