한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

AZO 박막의 후 열처리에 따른 특성변화

The post annealing effect on the properties of AZO films

  • 고기한 (한밭대학교 전기공학과) ;
  • 서재근 (한밭대학교 전기공학과) ;
  • 김재광 (한밭대학교 전기공학과) ;
  • 조형준 (성균관대학교 정보통신공학부) ;
  • 홍병유 (성균관대학교 정보통신공학부) ;
  • 최원석 (한밭대학교 전기공학과)
  • 발행 : 2009.06.18
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초록

In this work, transparent conducting Al-doped zinc oxide (AZO) films were prepared on Coming glass substrate by RF magnetron sputtering using an Al-doped ZnO target (Al: 2 wt.%) at room temperature and all films were deposited with athickness of 150 nm. We investigated the effects of the post-annealing temperature and the annealing ambient on structural, electrical and optical properties of AZO films. The films were annealed at temperatures ranging from 300 to $500^{\circ}C$ in steps of $100^{\circ}C$ using rapid thermal annealing equipment in oxygen. The thickness of the film was observed by field emission scanning electron microscopy (FE-SEM) and grain size was calculated from the XRD spectra using the Scherrer equation and their electrical properties were investigated using a hole measurement and the reflectance of AZO films was investigated by UV-VIS spectrometry.

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