한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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저온공정에서 제작한 ZnO:Al 박막의 특성 분석

  • 정유섭 (경원대학교 전기공학과) ;
  • 김상모 (경원대학교 전기공학과) ;
  • 홍정수 (경원대학교 전기공학과) ;
  • 손인환 (신성대학 디지털전기계열) ;
  • 김경환 (경원대학교 전기공학과)
  • Jung, Yu-Sup (Department of Electrical Engineering, Kyungwon University) ;
  • Kim, Sang-Mo (Department of Electrical Engineering, Kyungwon University) ;
  • Hong, Jung-Soo (Department of Electrical Engineering, Kyungwon University) ;
  • Son, In-Hwan (Department of Digital & Electrical Engineering, Shinsung College) ;
  • Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University)
  • 발행 : 2009.06.18
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초록

ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

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