한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

$BCl_3/Ar/Cl_2$ 유도결합 플라즈마를 이용한 ZnO 박막의 식각특성 연구

Etch characteristics of ZnO thin films using an inductively coupled plasma

  • 우종창 (중앙대학교 전자전기공학부) ;
  • 엄두승 (중앙대학교 전자전기공학부) ;
  • 양설 (중앙대학교 전자전기공학부) ;
  • 허경무 (중앙대학교 재생에너지학과) ;
  • 박정수 (중앙대학교 전자전기공학부) ;
  • 하태경 (중앙대학교 전자전기공학부) ;
  • 위재형 (중앙대학교 재생에너지학과) ;
  • 주영희 (중앙대학교 전자전기공학부) ;
  • 김동표 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Woo, Jong-Chang (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Um, Doo-Seung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Yang, Xuel (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Heo, Keyong-Moo (School of Regeneration Energy, Chung-Ang University) ;
  • Park, Jung-Soo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Ha, Tae-Kyung (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Wi, Jae-Hyung (School of Regeneration Energy, Chung-Ang University) ;
  • Joo, Young-Hee (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Dong-Pyo (School of Electrical and Electronics Engineering, Chung-Ang University) ;
  • Kim, Chang-Il (School of Electrical and Electronics Engineering, Chung-Ang University)
  • 발행 : 2009.06.18
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초록

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2$ in $BCl_3/Ar/Cl_2$ plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $BCl_3$(16 sccm)/Ar(4 sccm)/$Cl_2$(3 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data, the suggestions on the ZnO etch mechanism were made.

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