한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 하계학술대회 논문집
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- Pages.133-133
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- 2009
엔지니어드 터널베리어 메모리 적용을 위한 $HfO_2$ 층의 전하 트랩핑 특성
Charge trapping characteristics of high-k $HfO_2$ layer for tunnel barrier engineered nonvolatile memory application
- 유희욱 (광운대학교) ;
- 김민수 (광운대학교) ;
- 박군호 (광운대학교) ;
- 오세만 (광운대학교) ;
- 정종완 (세종대학교) ;
-
이영희
(광운대학교) ;
-
정홍배
(광운대학교) ;
-
조원주
(광운대학교)
- You, Hee-Wook (Kwangwoon Univ) ;
- Kim, Min-Soo (Kwangwoon Univ) ;
- Park, Goon-Ho (Kwangwoon Univ) ;
- Oh, Se-Man (Kwangwoon Univ) ;
- Jung, Jong-Wan (Sejong Univ) ;
-
Lee, Young-Hie
(Kwangwoon Univ) ;
-
Chung, Hong-Bay
(Kwangwoon Univ) ;
-
Cho, Won-Ju
(Kwangwoon Univ)
- 발행 : 2009.06.18
초록
It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide (
키워드