한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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IZTO 투명 반도체 박막의 전기적 특성에 대한 산소분압의 영향

Effects of oxygen partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films

  • 이근영 (구미전자정보기술원 모바일디스플레이공동연구센터) ;
  • 신한재 (구미전자정보기술원 모바일디스플레이공동연구센터) ;
  • 한동철 (구미전자정보기술원 모바일디스플레이공동연구센터) ;
  • 김상우 (금오공과대학교 정보나노소재공학과) ;
  • 이도경 (구미전자정보기술원 모바일디스플레이공동연구센터)
  • Lee, Keun-Young (Mobile Display Research Center, Gumi Electronics & Information Technology Research Institute) ;
  • Shin, Han-Jae (Mobile Display Research Center, Gumi Electronics & Information Technology Research Institute) ;
  • Han, Dong-Cheul (Mobile Display Research Center, Gumi Electronics & Information Technology Research Institute) ;
  • Kim, Sang-Woo (Department of information & Nano Materials Engineering, Kumoh National of institute technology) ;
  • Lee, Do-Kyung (Mobile Display Research Center, Gumi Electronics & Information Technology Research Institute)
  • 발행 : 2009.06.18
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초록

The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.

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