한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.1586-1589
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- 2009
Influence of Compositions on Sol-Gel Derived Amorphous In-Ga-Zn Oxide Semiconductor Transistors
- Kim, Dong-Jo (Dept. of Materials Science and Engineering, Yonsei University) ;
- Koo, Chang-Young (Dept. of Materials Science and Engineering, Yonsei University) ;
- Song, Keun-Kyu (Dept. of Materials Science and Engineering, Yonsei University) ;
- Jeong, Young-Min (Dept. of Materials Science and Engineering, Yonsei University) ;
- Moon, Joo-Ho (Dept. of Materials Science and Engineering, Yonsei University)
- Published : 2009.10.12
Abstract
We investigated the influence of chemical compositions of gallium and indium cations on the performance of solgel derived amorphous gallium indium zinc oxide (a-GIZO) based thin-film transistors (TFTs). Systematical composition study allows us to understand the solutionprocessed a-GIZO TFTs. Understanding of the compositional influence can be utilized for tailoring the solution processed amorphous oxide TFTs for the specific applications.