한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.1243-1246
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- 2009
a-Si Gate Driver with Alternating Gate Bias to Pull-Down TFTs
- Kim, Byeong-Hoon (Dept. of Electronics Engineering, Konkuk University) ;
- Pi, Jae-Eun (Dept. of Electronics Engineering, Konkuk University) ;
- Oh, Min-Woo (Dept. of Electronics Engineering, Konkuk University) ;
- Tao, Ren (Dept. of Electronics Engineering, Konkuk University) ;
- Oh, Hwan-Sool (Dept. of Electronics Engineering, Konkuk University) ;
- Park, Kee-Chan (Dept. of Electronics Engineering, Konkuk University)
- Published : 2009.10.12
Abstract
A novel a-Si TFT integrated gate driver circuit which suppresses the threshold voltage shift due to prolonged positive gate bias to pull-down TFTs, is reported. Negative gate-to-drain bias is applied alternately to the pull-down TFTs to recover the threshold voltage shift. Consequently, the stability of the circuit has been improved considerably.