한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- Pages.1189-1192
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- 2009
New Cu Process and Short Channel TFT
- Yang, J.Y. (LG Display, R&D Center) ;
- Hong, G.S. (LG Display, R&D Center) ;
- Kim, K. (LG Display, R&D Center) ;
- Bang, J.H. (LG Display, R&D Center) ;
- Ryu, W.S. (LG Display, R&D Center) ;
- Kim, J.O. (LG Display, R&D Center) ;
- Kang, Y.K. (LG Display, R&D Center) ;
- Yang, M.S. (LG Display, R&D Center) ;
- Kang, I.B. (LG Display, R&D Center) ;
- Chung, I.J. (LG Display, R&D Center)
- 발행 : 2009.10.12
초록
Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.