한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.1028-1031
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- 2009
Direct deposition technique for poly-SiGe thin film achieving a mobility exceeding 20 $cm^2$ /Vs with ~30 nm thick bottom-gate TFTs
- Lim, Cheol-Hyun (Imaging science and engineering Lab., Tokyo institute of technology) ;
- Hoshino, Tatsuya (Imaging science and engineering Lab., Tokyo institute of technology) ;
- Hanna, Jun-Ichi (Imaging science and engineering Lab., Tokyo institute of technology)
- Published : 2009.10.12
Abstract
High quality poly-SiGe thin films were prepared on 6-inch substrates using Reactive-thermal CVD with
Keywords
- Reactive-thermal CVD;
- Polycrystalline silicon germanium;
- Poly-SiGe Bottom-gate;
- TFT;
- Direct deposition