한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.998-1001
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- 2009
Highly Robust Bendable a-IGZO TFTs on Polyimide Substrate with New Structure
- Kim, Tae-Woong (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Stryakhilev, Denis (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Jin, Dong-Un (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Lee, Jae-Seob (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- An, Sung-Guk (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Kim, Hyung-Sik (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Kim, Young-Gu (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Pyo, Young-Shin (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Seo, Sang-Joon (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Kang, Kin-Yeng (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Chung, Ho-Kyoon (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Berkeley, Brain (OLED R&D Center, Samsung Mobile Display Co. LTD) ;
- Kim, Sang-Soo (OLED R&D Center, Samsung Mobile Display Co. LTD)
- Published : 2009.10.12
Abstract
A new flexible TFT backplane structure with improved mechanical reliability is proposed. Amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors based on this structure have been fabricated on a polyimide substrate, and the resultant mechanical durability has been evaluated in a cyclic bending test. The panel can withstand 10,000 bending cycles at a bending radius of 5 mm without any noticeable TFT degradation. After 10K bending cycles, the change of threshold voltage, mobility, sub-threshold slope, and gate leakage current were only -0.22V, -0.13