한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.826-829
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- 2009
High gain pentacene inverter using different pentacene-thickness in several dielectrics
- Mun, Sung-Jin (Institute of Physics and Applied Physics, Yonsei University) ;
- Lee, Ki-Moon (Institute of Physics and Applied Physics, Yonsei University) ;
- Lee, Kwang-H. (Institute of Physics and Applied Physics, Yonsei University) ;
- Oh, Min-Suk (Korea Electronics Technology Institute (KETI)) ;
- Im, Seong-Il (Institute of Physics and Applied Physics, Yonsei University)
- Published : 2009.10.12
Abstract
The authors report on the fabrication of p-type depletion mode inverter that composed of two pentacene based thin-film transistors (TFTs) on several dielectric surfaces. We use shift of threshold voltage depends on pentacene-thickness.