한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.543-545
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- 2009
ZnO Thin Film Transistor Prepared from ALD with an Organic Gate Dielectric
Abstract
With injection-type source delivery system of atomic layer deposition (ALD), bottom-contact and bottom-gate thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric for the first time. The properties of the ZnO TFT were greatly influenced by the device structure and the process conditions. The zinc oxide TFTs exhibited a channel mobility of 0.43