한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- Pages.396-399
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- 2009
Low Temperature Annealed Sol-Gel Aluminum Indium Oxide Thin Film Transistors
- Hwang, Young-Hwan (Dept. of Materials Science and Engineering, KAIST) ;
- Jeon, Jun-Hyuck (Dept. of Materials Science and Engineering, KAIST) ;
- Seo, Seok-Jun (Dept. of Materials Science and Engineering, KAIST) ;
- Bae, Byeong-Soo (Dept. of Materials Science and Engineering, KAIST)
- 발행 : 2009.10.12
초록
Thin-film transistors (TFTs) with an aluminum indium oxide (AIO) channel layer were fabricated via a simple and low-cost sol-gel process. Effects of annealing temperature and time were investigated for better TFT performance. The sol-gel AIO TFTs were annealed as low as