한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.330-332
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- 2009
Highly stable Zn-In-Sn-O TFTs for the Application of AM-OLED Display
- Ryu, Min-Ki (Transparent Display Team, OLED Lighting Team, ETRI) ;
- KoPark, Sang-Hee (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Yang, Shin-Hyuk (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Cheong, Woo-Seok (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Byun, Chun-Won (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Chung, Sung-Mook (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Kwon, Oh-Sang (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Park, Eun-Suk (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Jeong, Jae-Kyeong (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Cho, Kyoung-Ik (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Cho, Doo-Hee (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Lee, Jeong-Ik (Transparent Display Team, OLED Lighting Team, ETRI) ;
- Hwang, Chi-Sun (Transparent Display Team, OLED Lighting Team, ETRI)
- Published : 2009.10.12
Abstract
Highly stable bottom gate thin film transistors(TFTs) with a zinc indium tin oxide(Zn-In-Sn-O:ZITO) channel layer have been fabricated by rf-magnetron co-sputtering using a indium tin oxide(ITO:90/10), a tin oxide and a zinc oxide targets. The ZITO TFT (W/L=
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