한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.312-314
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- 2009
Organic Thin Film Transistors with Cross-linked PVP Gate Dielectrics by Using Photo-initiator and PMF
- Yun, Ho-Jin (Electronics and Telecommunications Research Institute (ETRI)) ;
- Baek, Kyu-Ha (Electronics and Telecommunications Research Institute (ETRI)) ;
- Park, Kun-Sik (Electronics and Telecommunications Research Institute (ETRI)) ;
- Shin, Hong-Sik (Electronics and Telecommunications Research Institute (ETRI)) ;
- Ham, Yong-Hyun (Electronics and Telecommunications Research Institute (ETRI)) ;
- Lee, Ga-Won (Chungnam National University) ;
- Lee, Ki-Jun (Chungnam National University) ;
- Wang, Jin-Suk (Chungnam National University) ;
- Do, Lee-Mi (Electronics and Telecommunications Research Institute (ETRI))
- Published : 2009.10.12
Abstract
We have fabricated pentacene based organic thin film transistors (OTFTs) with formulated poly[4-vinylphenol] (PVP) gate dielectrics. The gate dielectrics is composed of PVP, poly[melamine-coformaldehyde] (PMF) and photo-initiator [1-phenyl-2-hydroxy-2-methylpropane-1-one, Darocur1173]. By adding small amount (1 %) of photo-initiator, the cross-linking temperature is lowered to