대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 2009년도 제40회 하계학술대회
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- Pages.1332_1333
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- 2009
p-PEDOT/n-GZO heterojunction의 전기적 특성
Electrical characteristics of p-PEDOT/n-GZO heterojunction
- Lee, Jae-Sang (Kwangwoon University) ;
- Park, Dong-Hoon (Kwangwoon University) ;
- Koo, Sang-Mo (Kwangwoon University) ;
- Lee, Sang-Yeol (Korea Institute of Science and Technology)
- 발행 : 2009.07.14
초록
The electrical properties of an inorganic/organic heterojunction has been investigated by spin coating the p-type polymer poly(3,4 ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) on an n-type gallium doping zinc oxide (GZO) film. Current-voltage (I-V) characteristics of the fabricated heterojunction diodes have a good rectifying characteristics. The barrier height is calculated 0.8 eV.
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