대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

산화인듐아연 박막에 대한 급속 열처리 효과

Effects of rapid thermal annealing on indium-zinc-oxide films

  • 김원 (한양대학교 전자전기제어계측공학과) ;
  • 방정환 (한양대학교 전자전기제어계측공학과) ;
  • 엄현석 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Kim, Won (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Bang, Jung-Hwan (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 발행 : 2009.07.14
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초록

This work shows the effect of rapid thermal annealing (RTA) on properties of indium-zinc oxide (IZO) thin films. The RTA temperatue was controlled between 300 and $500^{\circ}C$ under the two different ambient conditions such as vacuum and oxygen. Structural, optical, and electrical properties of IZO films were characterized in terms of RTA conditions. XRD and resistivity measurements showed that crystallization for IZO films occurred at an RTA temperature of about $400^{\circ}C$. For the IZO film treated at $500^{\circ}C$ of RTA, the resistivity, carrier concentration, hall mobility, and transmittance were approximately $10^2{\Omega}cm$, $10^{15}cm^{-3}$, $10cm^2/V{\cdot}s$, and 85%, respectively, which would be suitable for its application to the channel layer in transparent thin film transistors.

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